april 1998 f dp6030 l / f db6030 l n-channel logic level enhancement mode field effect transistor general description features _________________________________________________________________________________ absolute maximum ratings t c = 25c unless otherwise note symbol parameter f dp6 030 l f db6 030 l units v dss drain-source voltage 30 v v gss gate-source voltage - continuous 20 v i d drain current - continuous 52 a - pulsed 156 p d maximum power dissipation @ t c = 25 c 75 w derate above 25 c 0.5 w/ c t j ,t stg operating and storage temperature range -65 to 175 c thermal characteristics r q jc thermal resistance, junction-to-case 2 c/w r q ja thermal resistance, junction-to-ambient 62.5 c/w f dp6030 l rev.c 1 52 a, 30 v. r ds(on ) = 0.0135 w @ v gs =10 v r ds(on ) = 0.020 w @ v gs =4.5 v . improved replacement for ndp6030l/n db6030l. l ow gate charge (t ypical 34 nc ). low crss ( t ypical 175 pf ). fast s witching speed . these n-channel logic level enhancement mode power field effect transistors are produced using fairchild 's proprietary, high cell density, dmos technology. this very high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage applications such as dc/dc converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. s d g ? 1998 fairchild semiconductor corporation
electrical characteristics t c = 25c unless otherwise noted) symbol parameter conditions min typ max unit drain-source avalanche ratings (note 1) w dss single pulse drain-source avalanche energy v dd = 15 v, i d = 21 a 150 mj i ar maximum drain-source avalanche current 21 a off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 37 mv/ o c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 10 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 1 ) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.6 3 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -4 mv/ o c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 26 a 0.0095 0.0135 w t j = 125 c 0.014 0.023 v gs = 4.5 v, i d = 21 a 0.015 0.02 i d (on) on-state drain current v gs = 10 v , v ds = 10 v 60 a i d (on) on-state drain current v gs = 4.5 v , v ds = 10 v 15 a g fs forward transconductance v ds = 10 v, i d = 26 a 37 s dynamic characteristics c iss input capacitance v ds = 1 5 v, v gs = 0 v, f = 1.0 mhz 1230 pf c oss output capacitance 640 pf c rss reverse transfer capacitance 175 pf switching ch aracteristics (note 1) t d(on) turn - on delay time v dd = 1 5 v, i d = 52 a 7.6 15 ns t r turn - on rise time v gs = 10 v, r gen = 24 w 150 210 ns t d(off) turn - off delay time 29 46 ns t f turn - off fall time 17 27 ns q g total gate charge v ds = 12 v i d = 26 a, v gs = 10 v 34 46 nc q gs gate-source charge 6 nc q gd gate-drain charge 8 nc drain-source diode characteristics i s maximum continuos drain-source diode forward current 52 a v sd drain-source diode forward voltage v gs = 0 v, i s = 26 a (note 1) 0.91 1.3 v t j = 125 c 0.8 1.2 note 1. p ulse test: pulse width < 300 s, duty cycle < 2.0%. f dp6030 l rev.c 1
f dp6030 l rev.c 1 typical electrical characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 20 40 60 80 100 v , drain-source voltage (v) i , drain-source current (a) ds d 7.0 4.0 4.5 5.0 3.5 6.0 v = 10v gs 3.0 5.5 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1 1.2 1.4 1.6 1.8 t , junction temperature (c) drain-source on-resistance j r ,normalized ds(on) v = 10v gs i = 26a d 1 2 3 4 5 0 10 20 30 40 50 60 v , gate to source voltage (v) i , drain current (a) v = 10v ds gs d 125c t = -55c a 25c figure 5. transfer characteristics . 0 20 40 60 80 100 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance d r , normalized ds(on) 4.5 5.0 10 4.0 6.0 7.0 v =3.5v gs 5.5 figure 1. on-region characteristics. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0001 0.001 0.01 0.1 1 10 60 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c a 25c -55c v =0v gs sd s 2 4 6 8 10 0 0.01 0.02 0.03 0.04 0.05 v , gate to source voltage (v) gs r , on-resistance (ohm) ds(on) 25c i = 26a d t = 125c a figure 3. on-resistance variation with temperature . figure 2. on-resistance variation with drain current and gate voltage . figure 4 . on-resistance variation with gate-to -source voltage. figure 6 . body diode forward voltage varia tion with source current and temperature.
f dp6030 l rev.c 1 typical electrical characteristics (continued) 0 10 20 30 40 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) g gs i = 26a d v = 6.0v ds 24v 12v 0.1 0.3 1 3 10 30 100 300 800 2000 4000 v , drain to source voltage (v) capacitance (pf) ds f = 1 mhz v = 0v gs c oss c iss c rss figure 8. capacitance characteristics . figure 7 . gate charge characteristics. 0.5 1 3 5 10 20 30 50 0.5 1 2 5 10 20 50 100 200 300 v , drain-source voltage (v)) i , drain current (a) ds d 100s 1ms 10ms 100ms dc r limit ds(on) v = 10v single pulse r = 2 c/w t = 25 c gs c q jc o 10s figure 9. maximum safe operating area. 0.01 0.1 1 10 100 1,000 0 500 1000 1500 2000 2500 3000 single pulse time (sec) power (w) single pulse r = 2 c/w t = 25c q jc c figure 10 . single pulse maximum power dissipation. figure 11 . transient thermal response curve . 0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t ,time (ms) transient thermal resistance single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective 1 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = 2.0 c/w q jc q jc q jc t - t = p * r (t) q jc c j p(pk) t 1 t 2
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